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We report on a simulation algorithm, based on kinetic Monte Carlo techniques, that allows us to investigate transport through high-permittivity dielectrics. In the example of TiN/ZrO2/TiN capacitor structures, using best-estimate physical parameters, we have identified the dominant transport mechanisms. Comparison with experimental data reveals the transport to be dominated by Poole–Frenkel emission from donorlike trap states at low fields and trap-assisted tunneling at high fields.

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Infrared (IR) detectors have been fabricated consisting of antenna-coupled metal-oxide-metal diodes (ACMOMDs). These detectors were defined using electron beam lithography with shadow evaporation metal deposition. They are designed to be sensitive to the IR range and work at room temperature without cooling or biasing. In order to achieve large arrays of ACMOMDs, nanotransfer printing have been used to cover a large area with metal-oxide-metal (MOM) diodes and with antenna structures. The printed antenna structures consist of gold and aluminum and exhibit a low electrical resistivity. A large area array of MOM tunneling diodes with an ultrathin dielectric ( 3.6-nm aluminum oxide) has also been fabricated via the transfer-printing process. The MOM diodes exhibit excellent tunneling characteristics. Both direct and Fowler-Nordheim tunneling has been observed over eight orders of magnitude in current density. Static device parameters have been extracted via kinetic Monte Carlo simulations and have confirmed the existence of a dipole layer at the aluminum/aluminum oxide interface of the printed tunneling diodes. The mechanical yield of the transfer-printing process for the MOM tunneling diodes is almost a 100%, confirming that transfer printing is suitable for large area effective fabrication of these quantum devices.

In this paper, we report reliability evaluation results for nanomixed amorphous ZrAlxOy and symmetrically or asymmetrically stacked ZrO2/Al2O3/ZrO2 dielectric thin films grown by atomic layer deposition method in cylindrical metal-insulator-metal capacitor structure. Clear distinctions between their I-V asymmetry and breakdown behavior were correlated with the differences in compositional modification of bottom interface, defect density, and conduction mechanism of the film stacks. The thermochemical molecular bond breakage model was found to explain the dielectric constant dependent breakdown field strength and electric field acceleration parameter of lifetime very well