As K-edge extended x-ray absorption fine structure has been carried out on the 2–3 monolayers thick interface of ad hoc grown InAsP/InP expitaxial multistructures deposited by low pressure metalorganic vapor phase epitaxy. The goal was to characterize the local structure of the unwanted, strained interface layers of InAsP produced by the exposure of the InP surface to AsH3 as occurs during the growth of InP/InGaAs heterostructures. We observed that the first shell environment of As at these interfaces is identical to that found in bulk InAs. In particular, we measure a constant As—In bond length, independently of As concentration at the interface; this implies that epitaxy with InP is accompanied by local structural distortions which accommodate the constant As—In bond length.

A local structural investigation has been carried out on the 10 A InAsXP1-, layer in ad hoc grown InAsXP1 -,/InP epitaxial multistructures deposited by low pressure metallorganic chemical vapor deposition by means of extended x-ray absorption fine structure spectroscopy, high resolution transmission electron microscopy, and high resolution x-ray diffraction analyses. The goal was to characterize the local structure of the unwanted, strained, interface layers of InAs,P, --x produced by the exposure of the InP surface to AsHs as occurs during the growth of InP/Ino,ssGa0.47As heterostructures optimized for photon&. High resolution x-ray diffraction and high resolution transmission electron microscopy confirm the high crystalline perfection of the investigated interfaces. As K-edge extended x-ray absorption fine structure analysis shows, the first shell environment of As at these interfaces is similar to that found in bulk InAsXP1-, alloys of similar composition, as determined experimentally and by comparison with recent theories of bond lengths in semiconductor alloys. In particular we measure an As-In bond length which varies at most 0.02 ,& with As concentration at the interface; this implies that epitaxy with InP is accompanied by local structural distortions, such as bond angle variations, which accommodate the nearly constant As-In bond length.

Selective reactive ion etching of InGaAs and InP over InAlAs in SiCl4/SiF4/HBr plasmas J. Vac. Sci. Technol. B 13, 2344 (1995); 10.1116/1.588071 New chemistry for selective reactive ion etching of InGaAs and InP over InAlAs in SiCl4/SiF4/HBr plasmas Appl. Selective dry etching of InGaAs and InP over AlInAs in CH4/H2/SF6 Appl.

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