We demonstrate the use of a synchrotron radiation source for in situ x-ray diffraction analysis during rapid thermal annealing (RTA) of 0.35 fim Salicide (self-aligned silicide) and 0.4 /nm Polycide (silicided polysilicon) TiSi2 Complementary Metal Oxide Semiconductor (CMOS) gate structures. It is shown that the transformation from the C49 to C54 phase of TiSi2 occurs at higher temperatures in submicron gate structures than in unpatterned blanket films. In addition, the C54 that forms in submicron structures is (040) oriented, while the C54 that forms in unpatterned Salicide films is randomly oriented. Although the preferred oreintation of the initial C49 phase was different in the Salicide and Polycide gate structures, the final orientation of the C54 phase formed was the same. An incomplete conversion of C49 into C54-TiSi2 during the RTA of Polycide gate structures was observed and is attributed to the retarding effects of phosphorus on the transition.
Herein, we report the morphological, optical, and structural modifications induced by the change of different functional groups in the para-position of the benzene ring in a series of chiral imines. These organic compounds were examined using scanning electron microscopy (SEM), optical absorption, X-ray diffraction, and photoluminescence (PL) techniques. SEM images showed drastic morphological changes, and the absorbance results showed significant changes in the bands located in the ∼200−400 nm range, associated with π → π*, δ → δ*, and n → π* transitions. An optical behavior similar to that of semiconductors (in the UV region), with two transitions in the ∼3.3−4.3 eV range was observed for the compounds. The results obtained by PL spectra exhibited changes in intensity, with gradually shifting increases in the green band emission. However, it is more intense with the crystals of the imine bearing the -OCH 3 functional group, considering that the aforementioned green band is associated with the different morphology in these crystals.
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