Thin films prepared under conditions of low adatom mobility are characterized by a highly anisotropic physical structure with a wide range of systematically varying column and void sizes. The structure zone models, previously developed to classify the larger sized physical structures, are revised to account for the evolutionary growth stages of structure development as well as the separate effects of thermal- and bombardment-induced mobility. The zone T introduced by Thornton is shown to be a subzone within zone 1.

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We examine the scaling limits for planar single gate technology using the ultra-thin Si channel MOSFET. Characteristics for extreme scaled devices with physical gate lengths down to 6nm and SO1 channels as thin as 4nm are presented. For the frst time, we report ring oscillators with 26nm gate lengths and ultra-thm Si channels.10.6.2 268-IEDM

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