No abstract

Tantalum nitride (TaN) films are deposited on silicon substrates by radio frequency reactive sputtering of Ta in N2/normalAr gas mixtures. The deposition rate, chemical composition, and crystalline microstructure are investigated by cross‐sectional transmission electron microscopy, X‐ray photoelectron spectroscopy, Auger electron spectroscopy, X‐ray diffraction, and atomic force microscopy, respectively. Those results indicate that the deposition rate, film composition, and microstructure correlate well with the N2/normalAr flow ratio. The deposition mechanism and kinetic model which control the film characteristics are presented as well. © 1999 The Electrochemical Society. All rights reserved.

A great achievement was gained by a short time of education. To prevent the incidence and mortality of oral cancer in Papua New Guinea, education programs should be arranged aggressively and effectively.

The result of tegafur-uracil treatment in patients with advanced oral cancer showed significant improvement in the 5-year OS, DFS, and DSS rate, while also showing a decreased distant metastasis rate. Tegafur-uracil treatment is a useful, effective, and well-tolerated anticancer treatment for advanced oral cancer.

No abstract