We report the first evidence that the I -X transfer mechanism plays a significant role in carrier transport in type-I semiconductor superlattices under an electric field. An anomalously delayed photocurrent was observed in a GaAs/AJAs type-I superlattice under ultrashort optical pulse excitation.This phenomenon can be explained by a switch of the electron transport path from I -I to I -X-I -X, caused by an electric-field induced change of the subband alignment of the second 1 state (I'2) in the well and the Xl state in the adjacent barrier.

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Observation of the type I-type II crossover in GaAs/AlAs shortperiod superlattices by optical spin orientation J. Appl. Phys. 69, 2532 (1991); 10.1063/1.348693Study of the directindirect bandgap transition in GaAs/AlAs shortperiod superlattices using photocurrent spectroscopy

Abstract:Crosstalk repair by gate sizing often increases the noise on adjacent wires, and results in cyclical iterations of noise repair. We propose a Delayed Actively Body-bias Controlled (D-ABC) SOI scheme for crosstalk noise repair by providing delayed forward bias to drivers. The delay between gate and body suppresses the crosstalk noise on adjacent wires. The proposed D-ABC SOI scheme has reduced the crosstalk noise by 48.5%, with 4.3% increase in the crosstalk noise on adjacent wires. Keywords: crosstalk, noise, signal integrity, SOI, body-bias Classification: Integrated circuits References[1] N. Hanchate and N. Ranganathan, "Simultaneous interconnect delay and crosstalk noise optimization through gate sizing using game theory," IEEE Trans.