Carbon nanotubes (CNTs), a low-dimensional material currently popular in industry and academia, are promising candidates for addressing the limits of existing semiconductors. In particular, CNTs are attractive candidates for flexible electronic materials due to their excellent flexibility and potential applications. In this work, we demonstrate a flexible CNT Schottky diode based on highly purified, preseparated, solution-processed 99% semiconducting CNTs and an integrated circuit application using the CNT Schottky diodes. Notably, the fabricated flexible CNT diode can greatly modulate the properties of the contact formed between the semiconducting CNT and the anode electrode via the control gate bias, exhibiting a high rectification ratio of up to 2.5 Â 10 5 . In addition, we confirm that the electrical performance of the CNT Schottky diodes does not significantly change after a few thousand bending/ releasing cycles of the flexible substrate. Finally, integrated circuit (IC) applications of logic circuits (OR and AND gates) and an analog circuit (a half-wave rectifier) were presented through the use of flexible CNT Schottky diode combinations. The correct output responses are successfully achieved from the circuit applications; hence, we expect that our findings will provide a promising basis for electronic circuit applications based on CNTs. Fig. 4 (a) Circuit diagram and (b) sequential measurement results of a half-wave rectifier circuit with two flexible CNT Schottky diodes for V CG values of À8 V, 0 V, and +8 V.This journal is

The gate-all-around (GAA) silicon nanosheet (SiNS) metal-oxide-semiconductor field-effect transistor (MOSFET) structures have been recognized as excellent candidates to achieve improved power performance and area scaling compared to the current FinFET technologies. Specifically, SiNS structures provide high drive currents due to wide effective channel width (W eff ) while maintaining short-channel control. In this paper, we fabricate a GAA SiNS MOSFET fully surrounded by a gate with a gate length (L G ) of 22 nm, a SiNS width (W NS ) of 23 nm, and SiNS thickness (T NS ) of 6 nm. In addition, the fabricated GAA SiNS MOSFETs were evaluated for electrostatic characteristics and short-channel effects (SCEs) according to various channel length and width dimensions. We confirmed that the GAA SiNS MOSFET showed similar short-channel controllability regardless of W NS due to the extremely thin T NS . In addition, we analyzed SCEs of GAA SiNS MOSFETs with different T NS through simulation.

Solution-processed carbon nanotubes (CNTs) have recently attracted significant attention as p-type thin-film transistor (TFT) channels due to their high carrier mobility, high uniformity, and low process temperature. However, implementing sophisticated macroelectronics with a combination of single CNT-TFTs has been challenging because it is difficult to fabricate n-type CNT-TFTs. Therefore, in combination with indium-gallium-zinc-oxide (IGZO), which has excellent electrical performance and has been commercialized as an n-type oxide TFT, we demonstrated various hybrid complementary metal-oxide semiconductor integrated circuits, such as inverters and nor and nand gates. This hybrid integration approach allows us to combine the strength of p-type CNT- and n-type IGZO-TFTs, thus offering a significant improvement for macroelectronic applications.

Highly purified, preseparated semiconducting carbon nanotubes (CNTs) hold great potential for high-performance CNT network transistors due to their high electrical conductivity, high mechanical strength, and room-temperature processing compatibility. In this paper, we report our recent progress on CNT network transistors integrated on an 8-inch wafer. We observe that the key device performance parameters of CNT network transistors at various locations on an 8-inch wafer are highly uniform and that the device yield is impressive. Therefore, this work validates a promising path toward mass production and will make a significant contribution to the future field of wafer-scale CNT electronics.

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