Plasticized–Poly(vinyl chloride) (P-PVC) for cables and insulation requires performances related to outdoor, indoor and submarine contexts and reduction of noxious release of HCl-containing fumes in case of thermal degradation or fire. Introducing suitable nanomaterials in polymer-based nanocomposites can be an answer to this clue. In this work, an industry-compliant cable-grade P-PVC formulation was added with nanostructured materials belonging to the family of Polyhedral Oligomeric Silsesquioxane (POSS). The effects of the nanomaterials, alone and in synergy with HCl scavenging agents as zeolites and hydrotalcites, on the thermal stability and HCl evolution of P-PVC were deeply investigated by thermogravimetric analysis and reference ASTM methods. Moreover, hardness and mechanical properties were studied in order to highlight the effects of these additives in the perspective of final industrial uses. The data demonstrated relevant improvements in the thermal stability of the samples added with nanomaterials, already with concentrations of POSS down to 0.31 phr and interesting additive effects of POSS with zeolites and hydrotalcites for HCl release reduction without losing mechanical performances.

No abstract

No abstract

The aim of the present work is the optimization of the Si /buffer-layer/YBCO multilayer deposition process so as to grow superconducting films of quality suitable for device applications. The structural properties of the Si/CeO 2 system, obtained by RF magnetron sputtering of CeO 2 targets in Ar atmosphere, have been studied. More than 50 films have been deposited and some of them submitted to post-deposition annealing treatments both in N 2 and O 2 atmospheres. The presence of an unwanted amorphous SiO 2 layer at the Si/CeO 2 interface compromises the YBCO c-axis orientation, and therefore the sharpness of the R versus T transition. A newly designed deposition system has been realized: it has been specially conceived for obtaining bi- and tri-layers, adopting two targets in YSZ and CeO 2, respectively. Results on YSZ/Si and CeO 2/ YSZ/Si systems obtained with the new machine are presented and discussed: (100) oriented YSZ films with nominal thickness of 40 nm have been obtained. The CeO 2 film subsequently deposited has the desired (100) orientation. The YBCO film, in the final YBCO/YSZ/CeO 2/ Si configuration, is c-axis oriented.