We examine the electroforming-dependent multifunctional resistive switching features by operating a merged Pt/Ta2O5−x/Ta–Ta/Ta2O5−x/Pt switching device under particular bias and polarity conditions.

Three-dimensional (3D) stackable memory devices including nano-scaled crossbar array are central for the realization of high-density non-volatile memory electronics. However, an essential sneak path issue affecting device performance in crossbar array remains a bottleneck and a grand challenge. Therefore, a suitable bidirectional selector as a two-way switch is required to facilitate a major breakthrough in the 3D crossbar array memory devices. Here, we show the excellent selectivity of all oxide p-/n-type semiconductor-based p-n-p open-based bipolar junction transistors as selectors in crossbar memory array. We report that bidirectional nonlinear characteristics of oxide p-n-p junctions can be highly enhanced by manipulating p-/n-type oxide semiconductor characteristics. We also propose an associated Zener tunneling mechanism that explains the unique features of our p-n-p selector. Our experimental findings are further extended to confirm the profound functionality of oxide p-n-p selectors integrated with several bipolar resistive switching memory elements working as storage nodes.

We examine the influence of variable oxygen concentration in TaOx active layers on the forming process and bipolar resistive switching (BRS) features of TaOx-based resistive switching cells. TaOx active layers prepared using various rf sputtering powers were systematically analyzed to identify the relation between initial compositions and BRS behavior. Proper control of oxygen vacancy concentration was clearly identified as a basic factor in ensuring typical BRS features without affecting the structural properties. We describe the possible origins of both conduction and switching based on the variation of oxygen concentrations initially provided by the growth conditions.

Three-dimensional (3D) stackable memory frames, including nano-scaled crossbar arrays, are one of the most reliable building blocks to meet the demand of high-density non-volatile memory electronics. However, their utilization has the disadvantage of introducing issues related to sneak paths, which can negatively impact device performance. We address the enhancement of complementary resistive switching (CRS) features via the incorporation of insulating frames as a generic approach to extend their use; here, a Pt/Ta2O5−x/Ta/Ta2O5−x/Pt frame is chosen as the basic CRS cell. The incorporation of Ta/Ta2O5−x/Ta or Pt/amorphous TaN/Pt insulting frames into the basic CRS cell ensures the appreciably advanced memory features of CRS cells including higher on/off ratios, improved read margins, and increased selectivity without reliability degradation. Experimental observations identified that a suitable insulating frame is crucial for adjusting the abrupt reset events of the switching element, thereby facilitating the enhanced electrical characteristics of CRS cells that are suitable for practical applications.

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