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Semiconducting thin films of ternary Hg Cr 2− S 4 ( = 0.4) have been deposited on glass substrate by the simple and economical chemical bath deposition method. We report the deposition and optimization of the solution growth parameters such as temperature, complexing agent, thiourea, and deposition time that maximizes the thickness of the deposited thin film. The Xray diffraction deposited Hg Cr 2− S 4 thin films having cubic structure. The thin films were uniform and adherent to substrate. The composition was found homogeneous and stoichiometric by EDAX analysis.

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The ternary thin films of composite HgxCr2-xS4 (x = 0.6) have been deposited by simple chemical bath deposition (CBD) technique on glass substrate. The thin films have been deposited at optimized conditions pH at 10 0.1, bath temperature 650C, deposition time 120 minutes. The films were uniform and adherent to glass substrates. They were characterized by structural, optical, and electrical measurement techniques. According to their X-ray diffraction patterns HgxCr2-xS4(x = 0.6) films are crystalline with band gap of 2.4 eV. Scanning electron micrographs showed that the substrates were well covered with films no cracks or pinholes were observed. The electrical resistivity of the films is found to be 1.3703 x 103 Ω-cm to 2.1243 x 103 Ω-cm at temperature range 3030k to 4230K. According to thermoelectric power measurements HgxCr2-xS4(x = 0.6) thin films are of n-type nature.