The use of a scanning force microscope with a metallized tip to do selective area oxidation of silicon is demonstrated. Sub-100 nm lines have been achieved. Removal of the oxide lines with buffered hydrofluoric acid reveals trenches in the silicon consistent with silicon consumption in SiO2 formation.

Nanometer scale patterns have been fabricated on a Langmuir–Blodgett deposited monolayer film of stearic acid using a scanning tunneling microscope in air. Carbon deposits build up underneath the tip for tip voltages with absolute value greater than 4 V. Using an atomic force microscope for image, lines 25 nm wide on a 60 nm period have been written. As confirmed with Auger electron spectroscopy, the unexposed film can be removed with a chloroform soak without affecting the existing carbon patterns, and no additional patterns could then be written because of the removal of the monolayer film.

A scanning tunneling microscope tip has been used to selectively write oxidation patterns on a thin Si 3 N 4 film on p + silicon. After etching the patterns in hydrofluoric acid, trenches are observed, consistent with silicon consumption in the oxidation process. The patterns in the nitride film could be transferred to the underlying silicon with an ammonium fluoride etch.