An Si on MgO 9 A120~ on Si double heterostructure material for integrated circuits has been developed. The MgO-A1203 epitaxial layer on Si was grown by using an open-tube A1-HC1-MgC1s-CO2-H2 vapor phase transport technique. The electron Hall mobility and the defect density of the Si active layer on epitaxially grown MgO 9 A120~ were~n = 1400 cm2/Vsec and 1 x 10Vcm 2, respectively, when the Si thickness was 8/~m and the doping concentration was n = 2 • 1014/cm 3. The growth conditions of MgO 9 A1203 epitaxial layers and the characteristics of the Si active layers are presented.) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 155.33.16.124 Downloaded on 2014-11-05 to IP

Für intergrierte Schaltungen (IC′s) wurde ein Si/Spinell/Si‐Material (Doppel‐Heterostruktur) entwickelt.

{100} oriented Pb(Zr,Ti)O3 (PZT) thin films were deposited by metalorganic chemical vapor deposition on both Ir/MgO(100) and Ir/MgAl2O4/SiO2/Si(100) substrates. The x-ray Φ-scan spectra for the (202) reflections revealed each film had fourfold symmetry, which was epitaxially grown as cube-on-cube. The switchable polarization (Qsw) of the PZT capacitor on the MgO substrate attained 100 μC/cm2 at 1.8 V; however, PZT capacitors on Si had a Qsw of 23 μC/cm2. This difference in Qsw is attributed to the volume fraction of (001) orientation of each PZT film. The difference in orientation between the two kinds of PZT films does not seem to depend on misfit of lattice parameters between PZT and Ir, but on the stress caused by the difference in the thermal expansion coefficients of MgO and Si.

We developed plasma-enhanced halide chemical vapor deposition (CVD) for Bi-Sr-Ca-Cu-0 (BSCCO) thin film. Superconducting BSCCO films were fabricated on 3-inch diameter sapphire substrates without postannealing. The CVD apparatus has four source-gas generation cells in which source materials (BiC13, SrI2, CaI2, and CUI) are evaporated or sublimated by heaters. Source gases are carried to the deposition chamber with helium. Oxidizing gases are 0 2 and/or H20. The total pressure in the deposition chamber was 0.1 torr and the 0 2 partial pressure 0.01 torr.We found that the superconducting BSCCO film could be deposited on sapphire substrates at less than 700°C without a solid-phase reaction between the film and substrate, and that plasma-enhanced CVD controlled the BSCCO phases even at 580°C. RF-plasma enhancement resulted in as-deposited superconducting BSCCO films. The caxis orientation of the films was perpendicular to the sapphire's (li02)-plane.The 700-A-thick (2212)-phase BSCCO film showed that the resistive transition started at about 110 K and that the zero-resistivity temperature was 70 K. The critical current density was about 2.5~106 Ncm2 at 10 K.Deposition was at 2 &min.

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