Intrinsically stretchable electronics represent an attractive platform for next-generation implantable devices by reducing the mechanical mismatch and the immune responses with biological tissues. Despite extensive efforts, soft implantable electronic devices often exhibit an obvious trade-off between electronic performances and mechanical deformability because of limitations of commonly used compliant electronic materials. Here, we introduce a scalable approach to create intrinsically stretchable and implantable electronic devices featuring the deployment of liquid metal components for ultrahigh stretchability up to 400% tensile strain and excellent durability against repetitive deformations. The device architecture further shows long-term stability under physiological conditions, conformal attachments to internal organs, and low interfacial impedance. Successful electrophysiological mapping on rapidly beating hearts demonstrates the potential of intrinsically stretchable electronics for widespread applications in health monitoring, disease diagnosis, and medical therapies.
Stretchable alternating
current electroluminescent display is an
emerging form of light-emitting device by combining elasticity with
optoelectronic properties. The practical implementations are currently
impeded by the high operating voltages required to achieve sufficient
brightness. In this study, we report the development of dielectric
nanocomposites by filling surface-modified ceramic nanoparticles into
polar elastomers, which exhibit a series of desirable attributes,
in terms of high permittivity, mechanical deformability, and solution
processability. Dielectric nanocomposite effectively concentrates
electric fields onto phosphor to enable low-voltage operation of stretchable
electroluminescent display, thereby alleviating safety concerns toward
wearable applications. The practical feasibility is demonstrated by
an epidermal stopwatch that allows intimate integration with the human
body. The high-permittivity nanocomposites reported here represent
an attractive building block for stretchable electronic systems, which
may find broad range of applications in intrinsically stretchable
transistors, sensors, light-emitting devices, and energy-harvesting
devices.
Stretchable electroluminescent device is a compliant form of light-emitting device to expand the application areas of conventional optoelectronics on rigid wafers. Currently, practical implementations are impeded by the high operating voltage required to achieve sufficient brightness. In this study, we report the fabrication of an intrinsically stretchable electroluminescent device based on silver nanowire electrodes and high-k thermoplastic elastomers. The device exhibits a bright emission with a low driving voltage by using polar elastomer as a dielectric matrix of the electroluminescent layer. Highly stretchable silver nanowire electrodes contribute to the exceptional elasticity and durability of the device in spite of bending, stretching, twisting, puncturing, and cutting. Stretchable electroluminescent devices developed here may find potential uses in wearable displays, deformable lightings, and soft robotics.
To investigate the evolution of inclusions in high‐Al steel with addition of La, a series of laboratory experiments and thermodynamic calculations are performed, considering the reaction time and amount of La added. The main inclusions in the high‐Al steel without the addition of La are Al2O3, MnS, and Al2O3–MnS. The La treatment can efficiently modify Al2O3 to La–Al–O or La–O–S inclusions. For La additions less than 0.0041 wt%, the evolution route for the inclusion in high‐Al steel is Al2O3 → LaAl11O18 → LaAlO3 with an increase in reaction time. For high La additions, the evolution route for the Al2O3 inclusion is Al2O3 → LaAl11O18 → LaAlO3 → La2O2S → La2S3. The experimental results correlate with those of the thermodynamic analysis. Notably, excess La in high‐Al molten steel may consume O and S to form La oxysulfide and sulfide, respectively, which prevents the precipitation of MnS inclusion and promotes the formation of AlN inclusion during solidification.
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