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In this paper, the SiC planar MOSFET with built-in reverse MOS-channel diode (SiC MCD-MOSFET) is investigated utilizing TCAD simulation tools. When the device is working as a freewheeling diode, the operation of the parasitic body diode is suppressed effectively due to the lower threshold voltage of the MCD. Therefore, the bipolar degradation issue can be completely solved. In addition, the SiC MCD-MOSFET is featuring superior dynamic characteristics. The input capacitance (CISS), reverse transfer capacitance (C RSS), gate charge (Q G) and gate-to-drain charge (Q GD) are reduced by a factor of ~2, ~7, ~2 and ~10, respectively, as compared to the conventional SiC MOSFET (SiC C-MOSFET). Combined with the slightly increased on-resistance (R ON), tremendously enhanced figures of merit (R ON ×Q G and R ON ×Q GD are decreased by a factor of 1.8 and 9, respectively) are obtained in the SiC MCD-MOSFET. The outstanding performance and easy-to-implement feature make the SiC MCD-MOSFET more attractive for further power electronic applications. Index Terms SiC planar MOSFETs, bipolar degradation, dynamic performance.

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