Articles you may be interested inInfluence of the surface morphology on the channel mobility of lateral implanted 4H-SiC (0001) metal-oxidesemiconductor field-effect transistors J. Appl. Phys. 112, 084501 (2012); 10.1063/1.4759354 Publisher's Note: "Limiting mechanism of inversion channel mobility in Al-implanted lateral 4H-SiC metal-oxide semiconductor field-effect transistors" [Appl. Phys. Lett. 99, 072117 (2011)] Appl. Phys. Lett. 99, 259901 (2011); 10.1063/1.3665121 High electron mobility due to sodium ions in the gate oxide of SiC-metal-oxide-semiconductor field-effect transistors J. Appl. Phys. 109, 023702 (2011); 10.1063/1.3533767 Inversion layer carrier concentration and mobility in 4H-SiC metal-oxide-semiconductor field-effect transistors J. Appl. Phys. 108, 054509 (2010); 10.1063/1.3484043Enhanced channel mobility of 4H-SiC metal-oxide-semiconductor transistors fabricated with standard polycrystalline silicon technology and gate-oxide nitridation

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The photothermal and photoluminescence spectroscopy for nondoped and chlorine (Cl)-doped ZnSe epitaxial layers were carried out at liquid nitrogen and room temperatures. We found two kinds of nonradiative carrier recombination centers which are Cl-related defects with activation energies of about 30 and 120 meV for the first time.

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We report on a novel method to fabricate carbon nanotube (CNT) nanoelectronic devices on silicon nitride membrane grids that are compatible with high resolution transmission electron microscopy (HRTEM). Resist-based electron beam lithography is used to fabricate electrodes on 50 nm thin silicon nitride membranes and focused-ion-beam milling is used to cut out a 200 nm gap across a gold electrode to produce the viewing window for HRTEM. Spin-coating and AC electrophoresis are used as methods to deposit small bundles of carbon nanotubes across the electrodes. We demonstrate the viability of this approach by performing both electrical measurements and HRTEM imaging of solution-processed CNTs in a device.