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A general approach based' on a physical model of impact ionization to fit and extrapolate measured ionization coefficients of electrons a and holes p in III-V semiconductors is'described. Materials being considered include GaAs, Al,Ga,-As (x = 0.1-0.4)) InP, In0.,3Ga,,.4,As, and ? .~ Ino.szAle.4sAs. Expressions giving the correct.dependencies are obtained at very large or small electric fields outside the range of most measurements while at the same time a reasonable fit is achieved for experimental data. The results of the proposed approach yielded a set of physical parameters, which can be coupled with the temperature-dependence relationships in the model to predict impact ionization coefficients 'over a wide range of electric fields at different. temperatures, and can be useful in calculations of temperature-dependent avalanche breakdown voltages of electronic and optical devices.

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