For the purpose of coherent high power microwave combining, an S-band high gain relativistic klystron amplifier with high phase stability is presented and studied. By the aid of 3D particle-in-cell code and circuit simulation software, the mechanism of parasitic oscillation in the device is investigated. And the RF lossy material is adopted in the simulation and experiment to suppress the oscillation. The experimental results show that with an input RF power of 10 kW, a microwave pulse with power of 1.8 GW is generated with a gain of 52.6 dB. And the relative phase difference fluctuation between output microwave and input RF signal is less than ±10° in 90 ns.
An S-band high gain relativistic klystron amplifier driven by kW-level RF power is proposed and studied experimentally. In the device, the RF lossy material is introduced to suppress higher mode excitation. An output power of 1.95 GW with a gain of 62.8 dB is obtained in the simulation. Under conditions of an input RF power of 1.38 kW, a microwave pulse with power of 1.9 GW, frequency of 2.86 GHz, and duration of 105 ns is generated in the experiment, and the corresponding gain is 61.4 dB.
Higher mode excitation is very serious in the relativistic klystron amplifier, especially for the high gain relativistic amplifier working at tens of kilo-amperes. The mechanism of higher mode excitation is explored in the PIC simulation and it is shown that insufficient separation of adjacent cavities is the main cause of higher mode excitation. So RF lossy material mounted on the drift tube wall is adopted to suppress higher mode excitation. A high gain S-band relativistic klystron amplifier is designed for the beam current of 13 kA and the voltage of 1 MV. PIC simulation shows that the output power is 3.2 GW when the input power is only 2.8 kW.
Internal field emission breakdown in the electro-dynamic structures of high-power microwave devices can seriously limit the devices’ output power and pulse duration. So an over-sized backward wave oscillator (BWO) is developed to increase the diameter of the electro-dynamic structure beyond the cut-off radius, and reduce these internal fields to levels, which are below critical breakdown levels. As a typical high power microwave (HPM) device, the oversized BWO is widely used and investigated. But some interaction phenomena between the beam and the microwave field in the device are not clearly understood because the beam-loaded effect is so obvious. And the physical process for the interaction is also considered to be complicated. Here as an oscillator, the feedback process is very important in the microwave device, which includes the oversized BWO. So the interaction process between the beam and the oversized BWO is explored from the feed back process instead of the field in the device. Then the physical mechanism for the feedback process in the oversized BWO is explored both in theoretical investigation and in particle-in-cell simulation. And the equivalent circuit is established for such a purpose. The mode control mechanism is explored based on the equivalent circuit. Finally an over-sized backward wave oscillator with rectangular profile corrugations is designed to produce TM<sub>01</sub> high power microwave radiation without mode-competition. An RF power of 7.9 GW at a frequency of 8.68 GHz is obtained in the particle in cell simulation driven by the beam with a beam voltage of 1 MW and a current of 20 kA, and the corresponding efficiency is 39.5%.
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