The development of classical and quantum information–processing technology calls for on-chip integrated sources of structured light. Although integrated vortex microlasers have been previously demonstrated, they remain static and possess relatively high lasing thresholds, making them unsuitable for high-speed optical communication and computing. We introduce perovskite-based vortex microlasers and demonstrate their application to ultrafast all-optical switching at room temperature. By exploiting both mode symmetry and far-field properties, we reveal that the vortex beam lasing can be switched to linearly polarized beam lasing, or vice versa, with switching times of 1 to 1.5 picoseconds and energy consumption that is orders of magnitude lower than in previously demonstrated all-optical switching. Our results provide an approach that breaks the long-standing trade-off between low energy consumption and high-speed nanophotonics, introducing vortex microlasers that are switchable at terahertz frequencies.

A soft body area sensor network presents a promising direction in wearable devices to integrate on-body sensors for physiological signal monitoring and flexible printed circuit boards (FPCBs) for signal conditioning/readout and wireless transmission. However, its realization currently relies on various sophisticated fabrication approaches such as lithography or direct printing on a carrier substrate before attaching to the body. Here, we report a universal fabrication scheme to enable printing and room-temperature sintering of the metal nanoparticle on paper/fabric for FPCBs and directly on the human skin for onbody sensors with a novel sintering aid layer. Consisting of polyvinyl alcohol (PVA) paste and nanoadditives in the water, the sintering aid layer reduces the sintering temperature. Together with the significantly decreased surface roughness, it allows for the integration of a submicron-thick conductive pattern with enhanced electromechanical performance. Various on-body sensors integrated with an FPCB to detect health conditions illustrate a system-level example.

Highly conductive Cu-Cu interconnections of SiC die with Ti/Ni/Cu metallization and direct bonded copper substrate for high-power semiconductor devices are achieved by the low-temperature sintering of Cu nanoparticles with a formic acid treatment. The Cu-Cu joints formed via a long-range sintering process exhibited good electrical conductivity and high strength. When sintered at 260 °C, the Cu nanoparticle layer exhibited a low resistivity of 5.65 μΩ·cm and the joints displayed a high shear strength of 43.4 MPa. When sintered at 320 °C, the resistivity decreased to 3.16 μΩ·cm and the shear strength increased to 51.7 MPa. The microstructure analysis demonstrated that the formation of Cu-Cu joints was realized by metallurgical bonding at the contact interface between the Cu pad and the sintered Cu nanoparticle layer, and the densely sintered layer was composed of polycrystals with a size of hundreds of nanometers. In addition, high-density twins were found in the interior of the sintered layer, which contributed to the improvement of the performance of the Cu-Cu joints. This bonding technology is suitable for high-power devices operating under high temperatures.

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