Control and the selection of the ground state emission and/or the excited state emission of an InAs quantum dot laser have been demonstrated. By controlling the currents injected into each section of a two-section cavity, switching between the ground state emission and the excited state emission with a separation of 100nm was achieved. With a constant total current, either ground state lasing (∼1.3μm), excited state lasing (∼1.2μm), or dual state lasing can be obtained simply by adjusting the current ratio between the two sections.

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Articles you may be interested inStrain relaxation in InAs self-assembled quantum dots induced by a high N incorporation J. Appl. Phys.

The strain status of the buried InAs self-assembled quantum dot was comprehended by measurement first time. Results show the in-plane strain is compressive and lattice in the growth direction is lager than the lattice of GaAs. The strain of the sample annealed at 650 degree relaxes in the growth direction. The growth and the lateral direction become relaxed in the sample annealed at 750 degree.