2007
DOI: 10.1063/1.2709987
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Wavelength switching transition in quantum dot lasers

Abstract: Control and the selection of the ground state emission and/or the excited state emission of an InAs quantum dot laser have been demonstrated. By controlling the currents injected into each section of a two-section cavity, switching between the ground state emission and the excited state emission with a separation of 100nm was achieved. With a constant total current, either ground state lasing (∼1.3μm), excited state lasing (∼1.2μm), or dual state lasing can be obtained simply by adjusting the current ratio bet… Show more

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Cited by 18 publications
(7 citation statements)
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“…7 QD-based devices typically operate on the QD GS, 3-6 though ES operation and simultaneous or switchable dualstate operation has attracted considerable attention. [8][9][10][11][12][13][14][15][16] While the ultrafast carrier dynamics of the GS single-state operating devices have been studied in a large number of works, [17][18][19][20][21][22][23][24][25][26][27] to date no experiments on the interdependency of the ultrafast gain dynamics in dual-state or ES laser devices have been conducted. Especially interesting is the influence of different steady-state conditions and carrier lifetimes in the ES on the carrier relaxation into the GS.…”
mentioning
confidence: 99%
“…7 QD-based devices typically operate on the QD GS, 3-6 though ES operation and simultaneous or switchable dualstate operation has attracted considerable attention. [8][9][10][11][12][13][14][15][16] While the ultrafast carrier dynamics of the GS single-state operating devices have been studied in a large number of works, [17][18][19][20][21][22][23][24][25][26][27] to date no experiments on the interdependency of the ultrafast gain dynamics in dual-state or ES laser devices have been conducted. Especially interesting is the influence of different steady-state conditions and carrier lifetimes in the ES on the carrier relaxation into the GS.…”
mentioning
confidence: 99%
“…two distinct wavelength regions, the ground-state and the excited-state [22]. A certain level in control of their emission states can be obtained by tuning the temperature or asymmetrical biasing [23], [24], [25], however, these solutions are either relatively slow or require additional external biasing. Another drawback of Quantum-Dot lasers is their replication, as their properties are highly dependent on the dot size, achieving a reliable manufacturing process is challenging.…”
Section: Introductionmentioning
confidence: 99%
“…Most experimental studies heretofore have been carried out on two section devices. Markus et al 12 used voltage applied to the absorber section as a controlling parameter of switching, while Wang et al 13 obtained state switching by changing injection current applied to both positively biased gain sections.…”
Section: Introductionmentioning
confidence: 99%