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Simple and cost-effective solutions using Si PIN diodes as detectors are presently utilized in various radiation-related applications in which excessive exposure to radiation degrades their charge transport properties. One of the conventional methods for the radiation hardness testing of such devices is time-consuming irradiation with electron beam or gamma-ray irradiation facilities, high-energy proton accelerators, or with neutrons from research reactors. Recently, for the purpose of radiation hardness testing, a much faster nuclear microprobe based approach utilizing proton irradiation has been developed. To compare the two different irradiation techniques, silicon PIN diodes have been irradiated with a Co-60 gamma radiation source and with a 6 MeV proton microbeam. The signal degradation in the silicon PIN diodes for both irradiation conditions has been probed by the IBIC (ion beam induced charge) technique, which can precisely monitor changes in charge collection efficiency. The results presented are reviewed on the basis of displacement damage calculations and NIEL (non-ionizing energy loss) concept.

We studied the effect of Co 60 gamma-radiation on the fiber Bragg gratings (FBGs) by irradiation time of UV Krypton fluoride (KrF) excimer laser among grating processing parameters. The FBGs were fabricated in a different UV laser irradiation time at 30, 60, 90, and 120 seconds using the same commercial Ge-doped silica core fiber (SMF-28e). It was exposed to gamma-radiation up to a high dose of 34.3 kGy at the dose rate of 106 Gy/min, and then it was analyzed radiation effects by measuring the radiation-induced change in the temperature sensitivity coefficient and Bragg wavelength shift. According to the experimental results, We confirmed that the UV laser irradiation period for grating inscription has a highly effect on the radiation sensitivity of the FBGs. The radiation-induced Bragg wavelength shift by the change of laser irradiation conditions showed a difference more than about 50 %.키워드 : 감마선, 광섬유 브래그 격자 센서, UV 레이저, 방사선 영향

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