The postfabrication modification of the group delay in silicon-photonic waveguides is proposed, simulated and demonstrated experimentally. Group delay variations of 2% are achieved through photo-induced changes to an upper cladding layer of photosensitive As₁₀Se₉₀ chalcogenide glass. The illumination of the cladding layer by intense green light for a few seconds leads to mass transfer and removal of material, away from irradiated regions. The phenomenon is employed in the localized removal of the cladding layer from above the core region of a silicon-on-insulator waveguide, thereby modifying its phase and group delays. Using the proposed method, the free spectral range of a chalcogenide-on-silicon Mach-Zehnder interferometer was modified by 1%. The technique is applicable to the postfabrication adjustment of the frequency response of silicon-photonic filters, comprised of several cascaded elements.

The stable one-time tuning of silicon-photonic directional couplers, over a broad range of coupling ratios, is achieved through the selective photo-removal of an upper cladding layer of chalcogenide glass. Analysis shows that the coupling coefficient per unit length between two parallel fully-etched silicon waveguides may be changed by 45%. The power coupling ratio of a 50 µm-long directional coupler between two such waveguides may be tuned arbitrarily between 0 and 1, with weak residual wavelength dependence. Smaller modifications in the coupling coefficient per unit length are obtained between two partially-etched ridge waveguides, on the order of 10%. The proposed procedure is demonstrated in the post-fabrication tuning of transmission notches of a race-track resonator, from over-coupling through critical coupling to weak coupling. The extinction ratio of specific resonances is varied between 4 and 40 dB. The coupling ratio of a tuned device remains stable following three months of storage.

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A versatile procedure for the low-temperature bonding of silicon and indium-phosphide to silicon is proposed and demonstrated. The procedure relies on the deposition and functionalization of self-assembled, single molecular layers on the surface of one substrate, and the subsequent attachment of the monolayer to the surface of the other substrate with or without its own monolayer coating. The process is applicable to the fabrication of hybrid-silicon, active photonic devices.

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