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A quantitative physical breakdown model for thin 5I10 is developed. The physical mechanism responsible fcor oxide breakdown has been reexamimed anid found to be hole trapping at localized areas. A quantitative model is built on this physi cal understanding of the wearout mechanism.Using this model, which considers electron injec tion, hole generation anid charge trapping during electrical stresses and their effects on oxide I-V characteristics, all commonly used reliability tests can be simulated. Results are presented for constant-voltage, constan t-current and rampxlultagc stress tests. One important result of the n)odel is that log( t l)) of constant-voltage accelerated test is a linear fuunction of 1/ E.\ not E(X. The elctcric field dependence of log(QBD) is the sante as that of' the hole generation rate a. The corre>lation between ramp-voltage stress and constan lXoltage stress is treated in detail, and an anaIx-tical expression relating the two is presented. This correlation prov>%rides a method and a theoretiat abaNis foIr Nubstituting t h time-consuming tBD test v ith the simple ramp-voltage breakdown test.

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