Subbreakdown drain leakage current in MOSFET

Chen, J.; Chan, T.Y.; Chen, I.C.; Ko, P.K.; Hu, Chenming

doi:10.1109/edl.1987.26713

Cited by 295 publications

(108 citation statements)

References 2 publications

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“…If, on the other hand, inelastic band-to-band tunneling or Schockley-Read-Hall mechanisms are relevant, holes can recombine with electrons at the source and, instead of HIBL, we observe a leakage current from source to drain due to gateinduced drain leakage (GIDL) [13].…”

Section: Physical Model and Resultsmentioning

confidence: 96%

Simulation of Graphene Nanoribbon Field-Effect Transistors

Fiori

Iannaccone

2007

IEEE Electron Device Lett.

312

188

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Section: Physical Model and Resultsmentioning

confidence: 96%

Simulation of Graphene Nanoribbon Field-Effect Transistors

Fiori

Iannaccone

2007

IEEE Electron Device Lett.

312

188

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“…Gate induced drain leakage (GIDL) constitutes a major concern as regard to the off-state current in scaled down MOS devices [32,33]. This section summarizes the GIDL results obtained in MOSFETs operated under cryogenic condition.…”

Section: Gate Induced Drain Leakagementioning

confidence: 99%

Characterization and Modeling of Silicon CMOS Transistor Operation at Low Temperature

Ghibaudo

1996

J. Phys. IV France

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“…In the OFF-state region of operation of a conventional lateral MOSFET, the drain leakage current is generally due to two main contributions, namely: 1) the GIDL and 2) the body leakage [11], [12]. A schematic representation of these two leakage mechanisms is shown in Fig.…”

Section: A Leakage Mechanismsmentioning

confidence: 99%

Asymmetric gate-induced drain leakage and body leakage in vertical MOSFETs with reduced parasitic capacitance

Gili

Kunz

Uchino

et al. 2006

IEEE Trans. Electron Devices

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Abstract-Vertical MOSFETs, unlike conventional planar MOSFETs, do not have identical structures at the source and drain, but have very different gate overlaps and geometric configurations. This paper investigates the effect of the asymmetric source and drain geometries of surround-gate vertical MOSFETs on the drain leakage currents in the OFF-state region of operation. Measurements of gate-induced drain leakage (GIDL) and body leakage are carried out as a function of temperature for transistors connected in the drain-on-top and drain-on-bottom configurations. Asymmetric leakage currents are seen when the source and drain terminals are interchanged, with the GIDL being higher in the drain-on-bottom configuration and the body leakage being higher in the drain-on-top configuration. Band-to-band tunneling is identified as the dominant leakage mechanism for both the GIDL and body leakage from electrical measurements at temperatures ranging from −50 to 200• C. The asymmetric body leakage is explained by a difference in body doping concentration at the top and bottom drain-body junctions due to the use of a p-well ion implantation. The asymmetric GIDL is explained by the difference in gate oxide thickness on the vertical 110 pillar sidewalls and the horizontal 100 wafer surface.Index Terms-Band-to-band tunneling, body leakage, fillet local oxidation (FILOX), gate-induced drain leakage (GIDL), leakage current, vertical MOSFET.

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Subbreakdown drain leakage current in MOSFET

Cited by 295 publications

References 2 publications

Simulation of Graphene Nanoribbon Field-Effect Transistors

Simulation of Graphene Nanoribbon Field-Effect Transistors

Characterization and Modeling of Silicon CMOS Transistor Operation at Low Temperature

Asymmetric gate-induced drain leakage and body leakage in vertical MOSFETs with reduced parasitic capacitance

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