A simple edge termination based on oxide ramp profile around the Schottky contact is used on Ni Schottky rectifier jabricated on a 2 . 7~1 0 '~ n-type 6H-Sic epilayer. Three anneals of the Schottky contacts were experimented. The diodes annealed at Y00"C showed excellent reverse characteristics with a nearly ideal breakdown at about 800V. theory with ideality factor nearly one.
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