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The magnetoresistance (MR) of Heusler alloy Ni 50 Mn 35 Sn 15 epitaxial films on MgO substrates is studied as a function of temperature T and magnetic field H. The large negative MR extends over martensitic transformation with maximum of À22% at 110 K. In martensitic and austenitic phase, the MR is À3% and À5%, respectively. We show that the MR is governed mainly by magnetization paraprocess at high magnetic fields and scales as the square of magnetization DmðH; TÞ 2 . V

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We report broadband ferromagnetic resonance (FMR) measurements based on a coplanar waveguide (CPW) of ultrathin magnetic film structures that comprise in-plane/out-of-plane decoupled layers deposited on nonmagnetic buffer layers of various thickness or other buffer structures with a diverse sheet resistance. We show that the excitation of the fundamental mode can be substantially (up to 10 times) enhanced in the structures deposited on buffer layers with a low sheet resistance in comparison to the structures deposited on thin or weakly conducting buffer layers. The results are analyzed in terms of shielding of the electromagnetic field of CPW by the conducting buffer layers. The effect of enhancement of FMR absorption can be attractive for applications in spintronic devices that utilize magnetization dynamics of ultrathin ferromagnetic layers.