Absorption, luminescence characteristics, and stimulated emission parameters of Nd3+ ions in the wide temperature region of a full concentration series of (La1 -,Nd,),Ga,SiO,, single crystals are studied. Luminescence intensity characteristics are analyzed and transition cross-section a t the laser wavelengths of two 4F3jz 4 *I11p and 'F3p -4113jz generation channels of activator are determined. Registered induced transitions are identified. Electromechanical characteristics of La,Ga,SiO,,, specifically, elastic, dielectric, and piezoelectric modules and constants are investigated. A comparison of the properties between Ls,Ga,SiO,, crystals and crystalline SiO, is carried out.
kI3yqeHbI a 6 C O p 6~M O H H O -n~M H H e C r I e H T H b I e XapaKTePHCTkiKI4ki IIapaMeTpbI CTMMyJIPIpO-BaHHOrO H3JlyseHkiH HOHOB Nd3+ B UIHPOKOM HHTepBane TeMnepaTyp IIOJIHOfi IFOHUeH-TpauMoHHOZi CepMH MOHORpHCTanJIOB (Lal-,Nd,),Ga,SiO,,. rIpOaHaJIM3MpOBaHbI MH-TeHcmHocTHbie xapaEcTepmcTmm moMmecueHIIm M onpenenem1 nonepewme cezIeHan nepexonoB Ha BonHax reaepaum ~B Y X naaepabix 4F3p + 4111p M 4F3p + 4113/2 KaHanoB MccnenonaHbI 3nempo-Mexamsecmie xapaKTepmmim La,Ga,SiO,,, B YacTHoCm, ynpyrkie, ~H~J I~K T~L Z = I~C K H~ M I I~~~O~J I~K T~M~~C I C M~ MOJQVIM PI nocTomume. nposeneiro cpaBHeHne C B O~~C T B La,Ga,SiO,, M KpMcTanmi~ecKoro SiO,.ZiKTXBaTOpa. MAeHTM@M4HPOBaHbI 3aperHCTpMpOBaHHbIe MHjQW4pOBaHHble IlepeXoAhI.in the whole interval of concentration x ( a t 4F3j2 -4111jz channel). Moreover, laser action with low threshold can be excited by the emission of convenient pumping sources as gas flash tubes. Preliminary information on La,Ga,SiO,, electromechanical characteristics can be taken from [4]. The possibility of growing large (Lal-,Nd,),Ga,SO, single crystals with high optical perfection, and the combination of satisfactory laser and piezoelectric properties make these crystals perspective materials for application in quantum electronics, piezotechniques, and acoustics, and also open interesting perspectives for putting experiments, e.g. on generation and study of the physics of very high frequency phonons of the THz range and investigations of electron-phonon interaction by piezo-and photoacoustic methods. The aim of the present work was the detailed study of absorption and luminescenceproperties with the analysis of intensity characteristics, and stimulated emission (SE) parameters of (Lal-,Ndz),Ga,SiO, crystals as well as measurements of their basic electromechanical constants such as elastic, dielectric, and piezoelectric constants. l) Leninskii prospekt 59, 117333 MOSCOW, USSR. 2) Part I see phys. stat. sol. (a) 80, 387 (1983). 39 *