Investigation of trigonal (La1−xNdx)3Ga5SiO14 crystals. II. Spectral laser and electromechanical properties

Abstract

Absorption, luminescence characteristics, and stimulated emission parameters of Nd3+ ions in the wide temperature region of a full concentration series of (La1 -,Nd,),Ga,SiO,, single crystals are studied. Luminescence intensity characteristics are analyzed and transition cross-section a t the laser wavelengths of two 4F3jz 4 *I11p and 'F3p -4113jz generation channels of activator are determined. Registered induced transitions are identified. Electromechanical characteristics of La,Ga,SiO,,, specifically, elastic, dielectric, and piezoelectric modules and constants are investigated. A comparison of the properties between Ls,Ga,SiO,, crystals and crystalline SiO, is carried out. kI3yqeHbI a 6 C O p 6~M O H H O -n~M H H e C r I e H T H b I e XapaKTePHCTkiKI4ki IIapaMeTpbI CTMMyJIPIpO-BaHHOrO H3JlyseHkiH HOHOB Nd3+ B UIHPOKOM HHTepBane TeMnepaTyp IIOJIHOfi IFOHUeH-TpauMoHHOZi CepMH MOHORpHCTanJIOB (Lal-,Nd,),Ga,SiO,,. rIpOaHaJIM3MpOBaHbI MH-TeHcmHocTHbie xapaEcTepmcTmm moMmecueHIIm M onpenenem1 nonepewme cezIeHan nepexonoB Ha BonHax reaepaum ~B Y X naaepabix 4F3p + 4111p M 4F3p + 4113/2 KaHanoB MccnenonaHbI 3nempo-Mexamsecmie xapaKTepmmim La,Ga,SiO,,, B YacTHoCm, ynpyrkie, ~H~J I~K T~L Z = I~C K H~ M I I~~~O~J I~K T~M~~C I C M~ MOJQVIM PI nocTomume. nposeneiro cpaBHeHne C B O~~C T B La,Ga,SiO,, M KpMcTanmi~ecKoro SiO,.ZiKTXBaTOpa. MAeHTM@M4HPOBaHbI 3aperHCTpMpOBaHHbIe MHjQW4pOBaHHble IlepeXoAhI.in the whole interval of concentration x ( a t 4F3j2 -4111jz channel). Moreover, laser action with low threshold can be excited by the emission of convenient pumping sources as gas flash tubes. Preliminary information on La,Ga,SiO,, electromechanical characteristics can be taken from [4]. The possibility of growing large (Lal-,Nd,),Ga,SO, single crystals with high optical perfection, and the combination of satisfactory laser and piezoelectric properties make these crystals perspective materials for application in quantum electronics, piezotechniques, and acoustics, and also open interesting perspectives for putting experiments, e.g. on generation and study of the physics of very high frequency phonons of the THz range and investigations of electron-phonon interaction by piezo-and photoacoustic methods. The aim of the present work was the detailed study of absorption and luminescenceproperties with the analysis of intensity characteristics, and stimulated emission (SE) parameters of (Lal-,Ndz),Ga,SiO, crystals as well as measurements of their basic electromechanical constants such as elastic, dielectric, and piezoelectric constants. l) Leninskii prospekt 59, 117333 MOSCOW, USSR. 2) Part I see phys. stat. sol. (a) 80, 387 (1983). 39 *

Magnetic Resonance and Dielectric Studies of a Nonlinear La3Ga5.5Ta0.5O14Single Crystal Doped with Erbium

“…Er bi um do p ed materi al s ha ve attra cted parti cular attenti on b ecause the Er 3 + i ntra -4 f -shell tra nsi ti on 4 I 1 3 = 2 { 4 I 1 5 = 2 near 1 m m atches the m i ni mum i n the absorpti on of sil i ca-based Ùber-opti c communi cati on system s. La G a : T a : O (LG T, l ang ata ite) and La G a : Nb : O (LG N) com p ounds wi th Ca G a G e O (l angasite) typ e structure crysta l l i ze i n the space gro up 321, consistent wi th the crysta l class 32 [1]. R ecent studi es of LG T and LG N reveal ed tha t these materi al s are pro m ising for acousto -el ectro ni c appl i cati ons and for design o f pi ezoelectri c sensors [2,3]. In addi ti on they ha ve nonl i near opti cal pro p erti es [3].…”

“…R ecent studi es of LG T and LG N reveal ed tha t these materi al s are pro m ising for acousto -el ectro ni c appl i cati ons and for design o f pi ezoelectri c sensors [2,3]. In addi ti on they ha ve nonl i near opti cal pro p erti es [3]. W hen do ped wi th ra re earth or tra nsiti on m etal i ons LG T and LG N crysta l s b ecome l um inescent m edi a abl e to generate and am pl if y l i ght.…”

Langasite Family Midinfrared Nonlinear Optical Oxide Materials: Structure, Property, and Applications

“…Since they show no phase transitions up to their melting points of approximately 1470 ∘ C, the material is considered to be able to replenish or even replacequartz as surface acoustic wave (SAW) filters and sensors for pressure, force, and acceleration at high temperatures [26]. In 1983, Kaminskii et al reported the laser properties of (La 1− Nd ) 3 Ga 5 SiO 14 (Nd:LGS) crystal for the first time and made a preliminary estimate about the crystal of some other uses [27,28]. Subsequently, the growth and laser properties of LGS, Nd:LGS, and Nd-doped Ca 3 Ga 2 Ge 4 O 14 (CGG) and Sr 3 Ga 2 Ge 4 O 14 (SGG) were studied in 1983, and their properties such as optics, piezoelectricity, elasticity, and typical values were also measured [29].…”

Growth of Nd:Sr3Ga2Ge4O14 crystals by a modified Bridgman method

“…Due to the statistically distributed Ga 3+ and Ge 4+ cations in the crystallographic site (1a and 3f) in the Ca-gallogermenate typed crystals, the dopant Nd 3+ ions experience a disordered crystal field, resulting in macroscopic line broadening of the absorption and luminescence spectra [3,4]. The broadened active absorption bands improve the pump efficiency, while the increased luminescence linewidth enables the generation of shorter laser pulses, similar as with laser Nd 3+ : glasses.…”