We report on realization of the InGaAs/GaAs/AlGaAs quantum well laser grown by metallorganic chemical vapor deposition on a virtual Ge-on-Si(001) substrate. The Ge buffer layer has been grown on a nominal Si(001) substrate by solid-source molecular beam epitaxy. Such Ge buffer possessed rather good crystalline quality and smooth surface and so provided the subsequent growth of the high-quality A3B5 laser structure. The laser operation has been demonstrated under electrical pumping at 77 K in the continuous wave mode and at room temperature in the pulsed mode. The emission wavelengths of 941 nm and 992 nm have been obtained at 77 K and 300 K, respectively. The corresponding threshold current densities were estimated as 463 A/cm2 at 77 K and 5.5 kA/cm2 at 300 K.

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Созданы InGaAs/GaAs/AlGaAs лазерные диоды с квантовыми ямами, выращенными методом МОГФЭ на неотклоненной Si (001)-подложке с буферным слоем Ge. Диоды генерируют стимулированное излучение в импульсном режиме при комнатной температуре в спектральном диапазоне 1.09−1.11 мкм.

GaAs-based heterostructures grown by metalorganic vapor-phase epitaxy on virtual Ge/Si substrates using an AlxGa1-xAs seed layer with different aluminum content x in the solid solution are investigated. The effect of solid solution composition on the density and size of antiphase domains emerging on the sample surface and on the optical properties of the GaAs layer is shown. Si(100) substrates with a small unintentional miscut of 0.7° to [110] were used for growth.

The effect of sulfide passivation (chemical treatment in a peroxide-sulfur etchant and in a solution of Na2S in isopropanol) and complication of the profile of the lateral surface of thyristor mesastructures on the blocking ability of GaAs thyristor mesastructures is investigated. It is shown that the blocking voltage of the chips increases several times both after chemical treatment of the surface and with the complication of the surface topology.