A magneto-optical isolator is demonstrated for use with a Si waveguide. The isolator is based on a Mach–Zehnder interferometer employing a nonreciprocal phase shift and is fabricated by bonding a magneto-optic garnet CeY2Fe5O12 (Ce:YIG) directly onto the Si waveguide. The surface-activated bonding is based on oxygen-plasma exposure in a high-vacuum chamber. The nonreciprocal phase shift is observed by applying an external magnetic field. An isolation ratio of 21dB is obtained at a wavelength of 1559nm.

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We observe spectral broadening of more than 350 nm, i.e., a 3/10-octave span, upon propagation of ultrashort 1.3-mum-wavelength optical pulses in a 4.7-mm-long silicon-photonic-wire waveguide. We measure the wavelength dependence of the spectral features and relate it to waveguide dispersion and input power. The spectral characteristics of the output pulses are shown to be consistent, in part, with higher-order soliton radiative effects.

By propagating femtosecond pulses inside submicron-crosssection Si photonic-wire waveguides with anomalous dispersion, we demonstrate that the pulse-propagation dynamics is strongly influenced by the combined action of optical nonlinearity and up to third-order dispersion with minimal carrier effects. Because of strong light confinement, a nonlinear phase shift of a few pi due to self-phase modulation is observed at a pulse peak-power of just ~250 mW. We also observe soliton-emitted radiation, fully supported by theoretical analysis, from which we determine directly the third-order dispersion coefficient, beta(3) = -0.73 +/- 0.05 ps(3)/m at 1537 nm.

The strong dispersion and large third-order nonlinearity in Si photonic wires are intimately linked in the optical physics needed for the optical control of phase. By carefully choosing the waveguide dimensions, both linear and nonlinear optical properties of Si wires can be engineered. In this paper we provide a review of the control of phase using nonlinear-optical effects such as self-phase and cross-phase modulation in dispersion-engineered Si wires. The low threshold powers for phase-changing effects in Si-wires make them potential candidates for functional nonlinear optical devices of just a few millimeters in length.