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In this paper, we present a new technique for isolating the electrical behavior of an SO1 MOSFET's from the self-heating effect using an ac conductance method. This method reconstructs an I-V curve by integrating high frequency output conductance data. The heating effect is eliminated when the frequency is much higher than the inverse of the thermal time constant of the SO1 device. We present measurement results from SO1 MOSFET's that demonstrate that heating can indeed be significant in SO1 devices.

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Data on the high-pressure melting temperatures of metals is of great interest in several fields of physics including geophysics. Measuring melt curves is difficult but can be performed in static experiments (with laser-heated diamond-anvil cells for instance) or dynamically (i.e., using shock experiments). However, at the present time, both a Currently at Los Alamos National Laboratory 2 experimental and theoretical results for the melt curve of lead are at too much variance to be considered definitive. As a result, we decided to perform a series of shock experiments designed to provide a measurement of the melt curve of lead up to about 50 GPa in pressure. At the same time, we developed and fielded a new reflectivity diagnostic, using it to make measurements on tin. The results show that the melt curve of lead is somewhat higher than the one previously obtained with static compression and heating techniques.

Certain imperfections in alpha-