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ZnO‐SnO2 thin films are deposited by rf sputtering using a sintered oxide target. As‐deposited films show different crystal structures of a hexagonal ZnO, a spinel type intermediate compound Zn2SnO4 or an amorphous by experimental conditions. The Zn2SnO4 films show higher than 80% transmissivity over the visible range and their lower side absorption edge is less than 320 nm. The electrical resistivity of as sputtered Zn2SnO4 films is about 5.0 × 10−2 Ω cm and is decreased up to about 1.7 × 10−2 Ω cm by a vacuum annealing due to the rapid increase of both, oxygen vacancies and carrier concentration. The resistivity and transmissivity of the amorphous ZnO‐SnO2 films are almost the same values as that of Zn2SnO4 films.

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The In2Oa-SnO 2 binary system between 1473 and 1873 K has been investigated bY TEM observations in detail. The intermediate compound has been detected above 1573 K in the composition range from 47.9 to 59.3 mol % SnO2, that crystal structure is long range ordered cubic system similar to In203 phase. On the other hand, below 1473 K, the intermediate compound is decomposed into In203 and SnO2 phases, according to the eutectoid reaction.

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