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The response of TiO2 and SrTiO3 photoelectrodes to subband gap light has been explored as a function of numerous variables, including intensity and wavelength of light, applied potential, temperature, and electrolyte composition. The photoresponse is shown to be linear with light intensity, to depend on the square root of the applied potential, to occur only for hv > 2.2 eV, and to be independent of temperature and electrolyte composition. These results suggest a bulk excitation process involving impurity and defect-related states in the gaps of these semiconductors. A qualitative model is presented to account for the main features of this excitation process and to provide a basis for suggesting future experiments.

resist and backscattering from the substrate are negligible. Therefore, the proximity effect which puts severe limitations on electron beam fabrication of closely packed narrowlinewidth pattern is expected not to be a serious problem with ion-beam lithography. Encouraging results in this direction have also been quoted by Tarui. 5 These preliminary results are very encouraging and indicate that ion beams can be employed in lithography for the production and/or projection transfer of very-narrowlinewidth patterns. In the meantime, the development of high-intensity field-emission sources which are needed for the production of fine ion beams is progressing rapidly. One such source is under development here, at the department of Applied Physics of Cornell University by B. Siegel and G. Hanson 9 and similar work has been reported by Levi-Setti.lo In conclusion, we would like to thank Professor e. Tang and Professor J. Ballantyne for kindly making available to us the Ar laser and Professor R. Burhman for use of the ion miller. The microphotopgraphs were taken using the Cambridge S 150 SEM available at the Submicron Facility in