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We report on the out-of-plane piezoelectric response (d33), measured via piezoresponse scanning force microscopy, of submicron capacitors fabricated from epitaxial PbZrxTi1−xO3 thin films. Investigations on 1 μm2 and smaller capacitors show that the substrate-induced constraint is dramatically reduced by nanostructuring. At zero field, the experimentally measured values of d33 for clamped as well as submicron capacitors are in good agreement with the predictions from thermodynamic theory. The theory also describes very well the field dependence of the piezoresponse of clamped capacitors of key compositions on the tetragonal side of the PbZrxTi1−xO3 phase diagram as well as the behavior of submicron PbZr0.2Ti0.8O3 (hard ferroelectric) capacitors. However, the field-dependent piezoresponse of submicron capacitors in compositions closer to the morphotropic phase boundary (soft ferroelectrics) is different from the behavior predicted by the theoretical calculations.

In this letter, we report on the integration of epitaxial ferroelectric Pb(Zr, Ti)O3 (PZT) thin films on Si [100] substrates using a SrTiO3 (STO) template layer and a conducting perovskite (La0.5Sr0.5)CoO3 electrode. X-ray diffraction studies reveal both in-plane and out-of-plane alignment of the heterostructure. The epitaxial films show extremely high remnant polarization as well as piezoelectric d33 coefficients compared to textured and untextured polycrystalline films.