Field effect transistors with SrTiO3 gate dielectric on Si

Abstract

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Interfacial reaction in the growth of epitaxial SrTiO3 thin films on (001) Si substrates

“…The decrease in free energy for reactions ͑4͒ and ͑5͒ indicates that thermodynamics favors TiSi 2 formation at 1000 K, as well as over the entire temperature range ͑300-1300 K͒ for which the thermodynamic data for these equations exist. The fact that all three samples were exposed to similar growth temperatures and no SrSiO 3 or TiSi 2 was detected in samples A and B grown with stoichiometric Sr/ Ti flux, excludes the direct reaction of SrTiO 3 with silicon ͓reaction ͑5͔͒ at growth temperature. The formation of TiSi 2 in sample C can therefore be attributed to the reaction between TiO 2 and silicon.…”

“…Since then, many groups have achieved epitaxial growth of SrTiO 3 on silicon using very different growth strategies. 3,4,18,19,[25][26][27] Even when epitaxial overgrowth of SrTiO 3 on silicon is achieved, however, a reaction might occur below the growing surface at the SrTiO 3 / Si interface, as is well known to occur in other epitaxial systems with unstable interfaces. [28][29][30][31][32] In the present work, we investigate the dependence of the SrTiO 3 / Si interface reaction on the flux ratio of Sr/ Ti and on the pretreatment of the silicon substrate surface.…”

“…In the specific case of SrTiO 3 , processing temperatures of ϳ600°C are used to achieve epitaxial SrTiO 3 films on ͑001͒ Si. 3,4,6,7,18,19 As interfacial reactions can lead to unwanted interfacial reaction layers with low permittivity that would degrade the device performance, the growth of films must be achieved through special reaction paths which can be provided by molecular-beam epitaxy ͑MBE͒. Initially, SrTiO 3 thin films were grown on ͑001͒ Si using a thick SrO buffer layer typically 10 nm in thickness.…”

“…[1][2][3][4][5][6][7] In practice, however, it remains a huge challenge to achieve the required electronic properties to make SrTiO 3 a viable gate dielectric for siliconbased MOSFETs. [8][9][10][11][12] The stability, bonding, and microstructure of the interface between the oxide film and the substrate are determined by thermodynamic and kinetic effects.…”

Molecular beam epitaxy growth of SrO buffer layers on graphite and graphene for the integration of complex oxides

“…For example, high-κ dielectric SrTiO 3 was first grown on Si(001) using a Sr flux to desorb SiO 2 from the surface [16], followed by silicide formation with Sr to facilitate the growth of SrO and, subsequently, SrTiO 3 [17][18][19][20][21]. These techniques produce SrTiO 3 -based metal-oxidesemiconductor field effect transistors (MOSFET) with gate leakage two orders of magnitude smaller than similar devices using SiO 2 [22]. While direct growth onto Si(001) without buffer layer has been achieved recently [23], the use of SrO(001) buffer layers still provides a facile method for complex oxide integration.…”