BiFeO 3 was studied as an alternative environmentally clean ferro/piezoelectric material. 200-nm-thick BiFeO 3 films were grown on Si substrates with SrTiO 3 as a template layer and SrRuO 3 as bottom electrode. X-ray and transmission electron microscopy studies confirmed the epitaxial growth of the films. The spontaneous polarization of the films was ϳ45 C/cm 2 . Retention measurement up to several days showed no decay of polarization. A piezoelectric coefficient ͑d 33 ͒ of ϳ60 pm/ V was observed, which is promising for applications in micro-electro-mechanical systems and actuators.

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We have used photoemission methods to directly measure the valence and conduction band offsets at SrTiO3/Si(001) interfaces, as prepared by molecular-beam epitaxy. Within experimental error, the measured values are the same for growth on n- and p-Si, with the entire band discontinuity occurring at the valence band edge. In addition, band bending is much larger at the p-Si heterojunction than at the n-type heterojunction. Previously published threshold voltage behavior for these interfaces can now be understood in light of the present results.