Articles you may be interested inDepletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics Appl. Phys. Lett. 103, 123511 (2013); 10.1063/1.4821858 GaN metal-oxide-semiconductor field-effect transistor inversion channel mobility modeling GaN metal-oxide-semiconductor high-electron-mobility-transistor with atomic layer deposited Al 2 O 3 as gate dielectric Appl. Phys. Lett. 86, 063501 (2005); 10.1063/1.1861122 Delta-doped AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with high breakdown voltages Appl.We report the initial demonstration of an enhancement mode MgO/p-GaN metal-oxide-semiconductor field-effect transistor ͑MOSFET͒ utilizing Si ϩ ion-implanted regions under the source and drain to provide a source of minority carriers for inversion. The breakdown voltage for an 80-nm-thick MgO gate dielectric was ϳ14 V, corresponding to a breakdown field strength of 1.75 MV cm Ϫ1 and the p-n junction formed between the p-epi and the source had a reverse breakdown voltage Ͼ15 V. Inversion of the channel was achieved for gate voltages above 6 V. The maximum transconductance was 5.4 S mm Ϫ1 at a drain-source voltage of 5 V, comparable to the initial values reported for GaAs MOSFETs.

Gd 2 O 3 has been deposited epitaxially on GaN using elemental Gd and an electron cyclotron resonance oxygen plasma in a gas-source molecular beam epitaxy system. Cross-sectional transmission electron microscopy shows a high concentration of dislocations which arise from the large lattice mismatch between the two materials. GaN metal-oxide-semiconductor field-effect transistors (MOSFETs) fabricated using a dielectric stack of single crystal Gd2O3 and amorphous SiO2 show modulation at gate voltages up to 7 V and are operational at source drain voltages up to 80 V. This work represents demonstrations of single crystal growth of Gd2O3 on GaN and of a GaN MOSFET using Gd2O3 in the gate dielectric.

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