This article describes, from an industrial user's point of view, how large-signal GaAs MESFET and HEMT modeling can be done accurately and efficiently for power MMIC amplifier design. The method is based on commercially available CAD tools enhanced by in-house software (e.g., small-signal parameter extraction, generation of load-pull contours). The Materka model is shown to predict accurately the large-signal characteristics of GaAs MESFETs, but not of pseudomorphic HEMTs. For these devices, a modified Angelov model is found to be adequate. A method for determining the numerous large-signal model parameters is presented. Model verification is achieved by comparing simulated and on-wafer measured data like static I(V)-characteristics, multiple bias S-parameters, gain compression characteristics, and load-pull contours. Results of device scaling and calculations of optimum load impedances are discussed. The close fit to the measured data proves that an excellent basis for large-signal power MMIC design has been established. 0 1995

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