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We fabricated a silicon mold for thermal Nanoimprint Lithography (NIL) with EB exposure and Deep-RIE. As a result, we obtained that including a grating whose pitch was 230nm with low roughness. IntroductionNanoimprint Lithography (NIL) attracts attentions because it can fabricate sub-10 nm feature size over a large area with low cost [1]. The contact-based nanoscale lithography, such as thermal (TH-NIL) and/or UV nanoimprints (UV-NIL), is expected as the next generation lithography. On the other hand, we have developed a novel filter device for dense wavelength division multiplexing (DWDM), i.e., a tunable band-selection interleaver switch, with silicon waveguide and have fabricated a silicon Bragg grating by EB exposure and Deep-RIE [2]. But the EB exposures is neither suitable for large-scale devices nor cost-effective. From this viewpoint we are studying functional devices including gratings for WDM application by employing the NIL, and a silicon mold has fabricated for these purpose.