Quantitative Auger analysis is much more difficult to achieve than quantitative XPS, as the latter shows only one photoelectron peak when the former exhibits many relaxation peaks laying over a 100 ev range. A good way to check our understanding of the Auger process is to simulate spectra. For that we need to get an estimation of (i) the ionization probability and its variation with depth, (ii) the contribution of each ionization and relaxation processes, and (iii) the type of interaction between electron and solid. As the phenomena are basically the same for the transport of Auger electrons as for primary electrons, we used the same physical parameters and simulation models (layer by layer and Monte Carlo) as we previously used for the determination of the background in copper. A comparison between calculated and experimental results is presented.

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Depth profiling analysis of passive films grown on the surface of two nickel-based alloys (Inconel 600 and Hastelloy C4) in NaCl media was carried out using Auger electron spectroscopy (Am) aod ioo sputtering. Improvement to the sequeotid sputtering model of HofmaM (1976) should be performed when preferential sputtering occurs, especially in Mwxmtaining alloys. In this way, the kinetic model of preferential sputtering of Ho et ul. (1976) was extended to the case of ternary alloys. However, concentration gradients created by the electrochemical treatment in the metallic layers below the oxidized 6lm make it unsuitable. Passive layers (5-11 monolayers) mainly consist of chromium oxide, always located at the film-alloy interface. A layered depth distribution of oxidized species is generally observed: in Inconel, chromium oxide is successively covered with iron and nickel oxides; in Hastelloy, chromium oxide is covered with nickel oxide (only very few molybdenum atoms are depicted in these films). Increasing the passivation potential, the temperature or the NaCI concentration slightly enhances the nickel oxide amounts in the film, its thickness and the external chloride contents.

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