Evaporated As2S3 thin films are employed as inorganic resists in microlithography. Its sensitivity is enhanced by overcoating with a AgCl layer to form a composite. The approach combines the silver halide technology well known to the photographic industry with the newly developed chalcogenide resist technology to yield higher sensitivity and resolution. A CF4 plasma process is developed for pattern generation in these inorganic resists. Since the resist contains arsenic, a dopant for silicon device fabrication, a diffusion process is developed and silicon p–n diodes are fabricated and characterized. A complete dry process of silicon device fabrication is discussed. Possible mechanisms of the photostructural change in As2S3 and the silver photodissolution into As2S3 are mentioned.

A comparison has been made between ion implantation damage, implanted impurity profiles, and the dopant electrical characteristics in silicon implanted with boron fluoride and rapid annealed. The rapid anneal is accompanied by outdiffusion of fluorine except in regions containing residual implantation damage in the form of dislocation loops. During the anneal the boron dopant becomes electrically activated.