Inorganic resist for dry processing and dopant applications

Chang, M. S.; Hou, T. W.; Chen, J. T.; Kolwicz, K. D.; Zemel, J.N.

doi:10.1116/1.570369

Cited by 28 publications

(2 citation statements)

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“…Chalcogenide photoresists (ChP) are characterized by very high resolution, high contrast, wide spectral range of photosensitivity and the possibility to be used on both planar and non-planar substrates [1][2][3]. Additionally, the ChP possess a very high refractive index, ranging from 2.3 to 3.5, they are stable, do not need in any thermal treatment and are transparent in the infrared from 600 nm up to 12-15 lm.…”

Section: Introductionmentioning

confidence: 99%

Glassy mAs2S3·nAs2Se3 photoresist films for interference laser lithography

et al. 2004

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Section: Introductionmentioning

confidence: 99%

Glassy mAs2S3·nAs2Se3 photoresist films for interference laser lithography

et al. 2004

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“…Therefore, process simplification and several other advantages over the conventional selective diffusion technique can be expected. Chang et al (10) first showed that an As2S8 inorganic resist can be used as an arsenic diffusion source and demonstrated good p-n diode characteristics. However, doping of other impurities, especially p-type doping, cannot be achieved with the use of As2Ss.…”

mentioning

confidence: 99%

A New Doping Technique Without SiO2 Patterning Using an Inorganic Photoresist

Yoshikawa

Ochi

Takeda

et al. 1982

J. Electrochem. Soc.

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A new impurity doping technique, using patterned inorganic photoresist as the diffusion source, is proposed. The inorganic resist films employed are (Se-Ge)-based ternary systems with donor or acceptor impurity as the third component. Diffusion process steps are described in detail. Both n-and p-type doping into Si are successfully achieved with this technique. The fabricated p+-n and n+-p diodes exhibit good p-n characteristics and are not at all inferior to those fabricated by the conventional method. A double diffused n-p-n transistor was also fabricated utilizing this technology. The incorporation of Se or Ge into Si is shown to be essentially negligible, as a result of SIMS analysis. This doping technique does not require the formation and patterning of an oxide mask. Process simplification and several other advantages can be expected.An inorganic photoresist using an amorphous chalcogenide film (1,2) has gained prominence in recent years due to its high resolution capability (3, 4), dry processing nature (5-7), electron beam sensitivity (8), and other advantageous material properties, such as no swelling deformation, strong acid resistance, and good uniformity. This resist is based on the Ag-photodoping effect and resulting change in chemical solubility (9). Such a photochemical reaction is one of the essential features of amorphous chalcogenides and known to be commonly observed in a variety of ehalcogenide systems. This fact indicates that, in inorganic photoresists, flexible material selection or material design is possible. This enables a sophisticated approach to a novel application of the inorganic resist.From such a point of view, application to an impurity diffusion source required in the silicon device fabrication appears to be one of the promising applications. By employing an amorphous chalcogenide film containing a desired impurity element as a constituent, the patterned inorganic resist itself can be used as an impurity diffusion source. This impurity doping technique does not require the formation and patterning of an oxide mask. Therefore, process simplification and several other advantages over the conventional selective diffusion technique can be expected. Chang et al. (10) first showed that an As2S8 inorganic resist can be used as an arsenic diffusion source and demonstrated good p-n diode characteristics. However, doping of other impurities, especially p-type doping, cannot be achieved with the use of As2Ss. Therefore, to enhance the possible usefulness of this doping technique, another approach is necessary.The chaleogenide systems employed in the present study are the (Se-Ge)-based ternary systems with donor or acceptor elements as the third component, since the binary system of Se-Ge has been proved to show a superior performance in its inorganic resist application. In this ternary system, considerable free choice of the third component is possible without any essential influence on the resist performance. This ensures the wide applicability of this doping technique, because doping of ...

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Optically‐Induced Diffusion and Dissolution of Metals in Amorphous Chalcogenides

Wágner

Frumar

2003

Photo‐Induced Metastability in Amorphous Semiconductors

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Inorganic resist for dry processing and dopant applications

Cited by 28 publications

References 0 publications

Glassy mAs2S3·nAs2Se3 photoresist films for interference laser lithography

Glassy mAs2S3·nAs2Se3 photoresist films for interference laser lithography

A New Doping Technique Without SiO2 Patterning Using an Inorganic Photoresist

Optically‐Induced Diffusion and Dissolution of Metals in Amorphous Chalcogenides

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