Structural and electrical properties of BF+2 implanted, rapid annealed silicon

Abstract

A comparison has been made between ion implantation damage, implanted impurity profiles, and the dopant electrical characteristics in silicon implanted with boron fluoride and rapid annealed. The rapid anneal is accompanied by outdiffusion of fluorine except in regions containing residual implantation damage in the form of dislocation loops. During the anneal the boron dopant becomes electrically activated.

A Simple, Non-Destructive Optical Technique to Characterize Ion-Implanted Semiconductor Wafers

“…Second, even in the absence of impurity activation, ion-beam induced structural changes such as dislocation loops and/or amorphization can alter the crystalline dielectric constant by a few percent. The dielectric constant in the i th implanted layer was thus expressed as C =6w + AE3+ AE:f (1 where As 3 is the density independent, structurally induced change and Aefc is the free carrier induced change. A simple Drude model [12] was used to express the dependence of Aefc on the local activated carrier density, N. The Drude terms take the form…”

“…The properties of the implanted region which are of primary interest include the dopant distribution, the activated carrier density profile and the degree of residual damage or amorphization. To date, the main tools used to determine these properties include SIMS, TEM, DLTS, and spreading resistance [1,2].…”