The stability of structures microfabricated in soft elastomeric polymers is an important concern in most applications that use these structures. Although relevant for several applications, the collapse to the ground of high aspect ratio structures (ground collapse) is still poorly understood. The stability of soft microfabricated high aspect ratio structures versus ground collapse was experimentally assessed, and a new model of ground collapse involving adhesion was developed. Sets of posts with diameters from 0.36 to 2.29 microm were fabricated in poly(dimethylsiloxane) and tested in air or immersed in water and ethanol to change the work of adhesion. The critical aspect ratio (the highest length-to-width ratio for which a post is not at risk of collapsing) was determined as a function of the diameter. The critical aspect ratio in air ranged from 2 to 4 and increased with the diameter. Work of adhesion was found to be determinant for and inversely correlated to stability. These results highlight the role played by adhesion and offer the possibility of improving stability by reducing the work of adhesion. The ground collapse model developed accounted for the main features of structure stability. The results indicate that ground collapse can be a limiting factor in the design of soft polymer structures.

We present an analytical model to interpret nanoscale capacitance microscopy measurements on thin dielectric films. The model displays a logarithmic dependence on the tip-sample distance and on the film thickness-dielectric constant ratio and shows an excellent agreement with finite-element numerical simulations and experimental results on a broad range of values. Based on these results, we discuss the capabilities of nanoscale capacitance microscopy for the quantitative extraction of the dielectric constant and the thickness of thin dielectric films at the nanoscale.

A simple method to measure the static dielectric constant of thin films with nanometric spatial resolution is presented. The dielectric constant is extracted from DC electrostatic force measurements with the use of an accurate analytical model. The method is validated here on thin silicon dioxide films (8 nm thick, dielectric constant approximately 4) and purple membrane monolayers (6 nm thick, dielectric constant approximately 2), providing results in excellent agreement with those recently obtained by nanoscale capacitance microscopy using a current-sensing approach. The main advantage of the force detection approach resides in its simplicity and direct application on any commercial atomic force microscope with no need of additional sophisticated electronics, thus being easily available to researchers in materials science, biophysics and semiconductor technology.

A model of deflection–voltage curves in atomic force microscopy and its use in DC electrostatic nanomanipulation experiments are presented. The proposed model predicts the deflection of the atomic force microscope probe as a function of the applied probe–substrate voltage, as well as the distance and voltage at which the tip collapses irreversibly onto the substrate due to electrostatic forces. The model is verified experimentally and its use in DC electrostatic manipulation of 25 nm radius gold nanoparticles is demonstrated.