The dc characteristics of the AlGaN∕GaN heterostructure field-effect transistors were examined at temperatures ranging from 25 to 260 °C under white light illumination. Drain current collapse measured was defined by the difference of drain current between light on and light off at Vgs=1V and Vds=5V. The surface-passivated device showed no drain current collapse, but the unpassivated device showed severe drain current collapse at 25 °C. Drain current and drain current collapse with an increase in temperature reduced, which resulted from the reduction of the electron mobility or saturation velocity and the thermal activation of the trapped electrons, respectively. Eventually, drain current collapse disappeared completely above 250 °C. The behavior of the temperature-dependent drain current collapse showed that the surface states for trapping electrons were continuously distributed with the temperature not having specific energy states.

The dynamic on-resistance increase during power switching is one of the challenges of GaN-based HEMTs (high-electron-mobility transistors) for power electronic applications. Both the surface traps and buffer traps reduce channel carriers, resulting in decreased operating current during power switching. In this work, we propose a source metal trench toward the buffer region to alleviate channel carriers' trapping in the buffer region. We compare the dynamic behaviors of the HEMTs with the source trench fabricated within and out of the mesa region. The results indicate less dynamic on-resistance increase at higher drain and gate stress voltages of the device with source trench in the mesa, as compared with the device with source trench fabricated away from mesa, or the one without a trench. We further develop physical models, including multiple current-conducting paths, reduction of buffer traps through source trench, and the re-distribution of the electric field profile, to explain the phenomenon.