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In this paper, we study self-heating in a multi-finger MOSFET transistor. Different source-drain voltages are applied so that the transistor is in triode and saturation regimes. Thermoreflectance imaging technique was used to obtain high resolution thermal images of the transistor. This allowed us to obtain profiles with high spatial and temperature resolution. We verified that the actual size and shape of the heating source are modified as the biasing condition changes. Detailed comparison between the measurement results and analytical calculations proves that the thermal resistance of transistor is dependent on the biasing condition. It can change by a factor bigger than 5 for different drain-source voltages. Even in the saturation regime, the thermal resistance of the transistor can change by 50% as a function of bias.

Robust and efficient optical coupling from laser-to-fiber and from fiber-to-detector is an important consideration for loss limited optical data links. Standard chip scale package process flow used by the semiconductor industry is based upon machine vision assisted "pick-and-place" die attach and wirebonding operations. To realize scalable heterogeneous integration of optical elements, mass production must be done within the framework of existing manufacturing equipment and avoid active opto-mechanical alignment steps.This publication reports on the performance of a set of a refractive, hemi-aspheric, nonimaging optical concentrators that are simple and amenable to standard package integration flow with passive alignment. A set of lenses are made by single-point diamond-turning and injection molding of unfilled polyetherimide, which is relatively transparent at the link operating wavelength of 850 nm. The goal of the design is to balance the absolute coupling at optimum alignment with wide margins for angular and linear misalignment.