Abstract:In this paper, we study self-heating in a multi-finger MOSFET transistor. Different source-drain voltages are applied so that the transistor is in triode and saturation regimes. Thermoreflectance imaging technique was used to obtain high resolution thermal images of the transistor. This allowed us to obtain profiles with high spatial and temperature resolution. We verified that the actual size and shape of the heating source are modified as the biasing condition changes. Detailed comparison between the measure… Show more
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