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Switching between states in a dispersive bistable injection-locked slave laser has been theoretically investigated. We show that the switching can be achieved by relatively small and short (≈10-50 ps) variation of the master laser injection power or frequency, which, besides the variation of the slave laser optical power, leads to significant variation of its photon phase (≈5π/6). By using an analytical model, we calculate the switching time dependence on the magnitude of the injection power and the frequency detuning variation.

Silicon photonics is experiencing a dramatic increase in interest due to emerging application areas and several high profile successes in device and technology development (Liu et al Nature 427:615, 2004; Rong et al Nature 433:725, 2005; Almeida et al Nature 431:1081, 2004). Conventional waveguides in silicon photonics are designed for the telecom wavelengths. However, mid- and long-wave infrared regions are interesting for several application areas including sensing, communications, signal processing, missile detection and imaging (Soref et al J Opt A Pure Appl Opt 8:840, 2006). The most popular waveguide platform in silicon photonics is the Silicon-On-Insulator (SOI) structure, in the form of either a strip or a rib waveguide. This material structure, however, is not suitable for longer wavelengths (except in the 2.9-3.6 mu m range) due to the absorption spectra of silicon dioxide (Soref et al J Opt A Pure Appl Opt 8:840, 2006). In this paper, we discuss the design and fabrication of two different waveguide structures, the freestanding (Yang et al Appl Phys Lett 90:241109, 2007) and hollow core waveguides (StankoviÄaut double dagger et al Proceedings of 51th Conference ETRAN, 2007). The former is suitable for long-wave infrared applications as it has an air cladding, whilst the latter is a candidate for sensing in the mid-wave infrared wavelength region

Channel dropping waveguide filters based on single and multiple resonators in silicon-on-insulator (SOI) technology are of great interest due to their compactness and high wavelength selectivity, which is a desirable feature for photonic modulators, detectors, and other optically integrated components in telecommunication systems, in particular for wavelength division multiplexing (WDM) systems. Particular advantage of these filters is that they are capable of producing relatively large free spectral range (FSR) as well as narrow 3-dB bandwidth of the filter resonances. Herein we report experimental results and discuss the possibility of designing mono-mode and (nearly) polarization independent SOI ring and racetrack resonators with the FSR in excess of 30 nm.OCIS codes: 130.0130, 250.0250, 230.7370, 260.3060, 260.5430. doi: 10.3788/COL20090704.0291. Miniaturization of photonic devices has been significantly intensified in the last decade in an attempt to improve a footprint and performance of integrated optical components. Silicon-on-insulator (SOI) has emerged as a promising material choice for various integrated optoelectronic devices [1] . It is attractive for complex optical systems as the cost can be significantly reduced due to the compatibility with complementary metal oxide semiconductor (CMOS) technology [2] . It also has a high refractive index contrast between the core and the cladding, which is an important property for good confinement of light and efficient guiding and coupling in sub-micron waveguides. However, for those devices that are intended to be part of broadband optical networks, for example multiplexers and de-multiplexers, it is desirable to demonstrate a high selectivity and a tunable response. Thus, it is necessary to provide wavelength selective elements with the ability to filter input data streams producing a large free spectral range (FSR), a small full-width at half-maximum (FWHM), and a high quality factor (Q), and all conditions set by communication standards. Owing to the generic and adaptable operation, ring-resonator-types of filters in SOI are often considered as candidates to meet these demands.In silicon photonics, there is a particular focus on two waveguide architectures upon which the devices are typically built. Rib waveguides have proven to be particularly useful regarding polarization properties [3] . Single-mode and polarization independent (PI) resonators on rib waveguides have already been experimentally demonstrated [4] , but their FSR is usually small for applications in optical networks. On the other hand, strip waveguides, or photonic wires, allow small bend radii [5,6] , which in turn results in the improved FSR. They have to be rather small in cross-section to prevent higher-order modes (HOMs) from propagation [7] , and they exhibit polarization dependence and loss issues.In majority of applications, single-mode devices are required in order to minimize dispersion caused by multiple spatial modes which, in turn, allows for more information to be transmi...