Downloaded From: http://proceedings.spiedigitallibrary.org/ on 06/28/2016 Terms of Use: http://spiedigitallibrary.org/ss/TermsOfUse.aspx Proc. of SPIE Vol. 8324 83240Z-2 Downloaded From: http://proceedings.spiedigitallibrary.org/ on 06/28/2016 Terms of Use: http://spiedigitallibrary.org/ss/TermsOfUse.aspx

Automated scanning transmission electron microscopy (STEM) metrology provides critical dimension (CD) measurements an order of magnitude more precise than comparable scanning electron microscopy (SEM) measurements. New developments in automation now also provide throughput and response time sufficient to support high volume microelectronic manufacturing processes. The newly developed methodology includes automated, focused ion beam (FIB) based sample preparation; innovative, ex-situ sample extraction; and automated metrology. Although originally developed to control the production of thin film magnetic heads for data storage, the technique is fully applicable to any wafer-based manufacturing process.

No abstract

Extended abstract of a paper presented at Microscopy and Microanalysis 2010 in Portland, Oregon, USA, August 1 – August 5, 2010.

No abstract