We show that the photoluminescence intensity of GaN and InGaN nanowires in electrolytes sensitively responds to variations of the pH value and the applied bias. The realization of an electrochemical working point allows pH detection with a resolution better than 0.05 pH. The observed effects are attributed to bias-dependent nonradiative recombination processes competing with interband transitions. The results show that group III-nitride nanowires are excellently suited as nanophotonic pH sensor elements.

We report on the electrochemical characteristics of GaN nanowire (NW) ensembles grown by plasma-assisted molecular beam epitaxy on Si111 substrates and on the influence of Si and Mg doping. The NW electrochemical properties in terms of surface capacitance (C(S)), surface resistance (R(S)) are extracted from electrochemical impedance spectra. While Mg doping of GaN NWs does not cause a significant variation of these quantities, an increase of the Si concentration leads to an increase of C(S) and a simultaneous decrease of R(S), indicating the presence of charge carriers in the NWs. According to the extracted values for R(S) and C(S) the NWs are classified into resistive and conductive. For conductive NWs charge transfer to a ferricyanide redox couple in the electrolyte is demonstrated and the ensemble average of the flatband voltage was determined. Variation of the lateral surface potential due to application of an external bias via the electrolyte is demonstrated.

We report a novel hybrid charge sensor realized by the deposition of phospholipid monolayers on highly doped n‐GaN electrodes. To detect the binding of recombinant proteins with histidine‐tags, lipid vesicles containing chelator lipids were deposited on GaN electrodes pre‐coated with octadecyltrimethoxysilane monolayers. Owing to its optical transparency, GaN allows the confirmation of the fluidity of supported membranes by fluorescence recovery after photo‐bleaching (FRAP). The electrolyte‐(organic) insulator‐semiconductor (EIS) setup enables one to transduce variations in the surface charge density ΔQ into a change in the interface capacitance ΔC p and, thus, the flat‐band potential ΔU FB. The obtained results demonstrate that the membrane‐based charge sensor can reach a high sensitivity to detect reversible changes in the surface charge density on the membranes by the formation of chelator complexes, docking of eGFP with histidine tags, and cancellation by EDTA. The achievable resolution of ΔQ ≥ 0.1 μC/cm2 is better than that obtained for membrane‐functionalized p‐GaAs, 0.9 μC/cm2, and for ITO coated with a polymer supported lipid monolayer, 2.2 μC/cm2. Moreover, we examined the potential application of optically active InGaN/GaN quantum dot structures, for the detection of changes in the surface potential from the photoluminescence signals measured at room temperature.

The application of InGaN/GaN nanowire heterostructure arrays as photonic probes for dynamic imaging of biochemical and cellular processes in an incident light fluorescence microscope is demonstrated. The photoluminescence intensity of InGaN/GaN nanowires sensitively depends on the pH value of the surrounding solution, making them suitable probes for the optical detection of biochemical processes accompanied by local pH variations. Grown on a conductive substrate, the nanowire arrays can be operated in a well-defined electrochemical working point with high sensitivity and stability. The achievable pH and bias resolution as well as signal-to-noise ratio are assessed as a function of the working point and for different integration times. A bias resolution of 1 mV and a pH resolution of 0.03 are achieved at a time resolution below 25 ms. The application for dynamic imaging of the activity of isolated intestinal crypts from Wistar rats is demonstrated. Here, the pH change in the vicinity of the crypt is quantified and attributed to the activity of the sodium-proton exchanger (NHE). Imaging of the effect of amiloride and NH 4 Cl on its activity is demonstrated with a spatial resolution of <0.63 µm and reveals that NH 4 Cl-induced NHE activation preferentially occurs in the upper part of the crypt.

We investigated the electric-field dependence of the photoluminescence-emission properties of InGaN/GaN quantum dot multilayers in contact with an electrolyte. Controlled variations of the surface potential were achieved by the application of external electric fields using the electrolytic Schottky contact and by variation of the solution's pH value. Prior to characterization, a selective electrochemical passivation process was required to suppress leakage currents. The quantum dot luminescence is strongly affected by surface potential variations, i.e., it increases exponentially with cathodic bias and acidic pH values. The results cannot be explained by a modification of intra-dot polarization induced electric fields via the quantum confined Stark effect but are attributed to the suppression/enhancement of non-radiative recombination processes, i.e., mainly hole transfer into the electrolyte. The results establish a link between the photoluminescence intensity and the magnitude of electric fields at the semiconductor/electrolyte interface.